PART |
Description |
Maker |
2SB1151-T60-T 2SB1151L-T60-T 2SB1412-TN3-F-R 2SB14 |
NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS HIGH VOLTAGE HIGH SPEED SWITCHING BIPOLAR POWER GENERAL PURPOSE TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
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友顺科技股份有限公司 UTC[Unisonic Technologies]
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NCP1050ST100 NCP1050ST44 NCP1052P136 NCP1050/D NCP |
Monolithic High Voltage Gated Oscillator Power Switching Regulator 2 A SWITCHING REGULATOR, 50 kHz SWITCHING FREQ-MAX, PDSO4 RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效,5安培开关稳压器 RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 2 A SWITCHING REGULATOR, 154 kHz SWITCHING FREQ-MAX, PDIP8 24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 24字符X2行,5X7点矩阵字符和光标
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ON Semiconductor
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2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS From old datasheet system FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
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Toshiba Corporation Toshiba Semiconductor
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MIG20J806HA MIG20J806H EE08617 |
Silicon N-channel integrated IGBT module for high power switching, motor control applications N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) N通道IGBT的(大功率开关,马达控制应用
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TOSHIBA[Toshiba Semiconductor] Toshiba, Corp.
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MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
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TOSHIBA
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2SD2584 EE08394 |
HIGH POWER SWITCHING APPLICATIONS From old datasheet system NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)
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http:// TOSHIBA[Toshiba Semiconductor]
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19007-0032 19005-0001 19005-0015 19007-0029 19007- |
.187X.020 FIQD FLAG EXP. TAPED (BB-2224X 2 mm2, PUSH-ON TERMINAL Female Disconnect Solderless Terminal; Wire Size (AWG):18-22; Tab Width:0.250"; Insulator Color:Pink; Terminal Insulation:Nylon; Gender:Female 0.8 mm2, PUSH-ON TERMINAL .250X.032 FEM.FIQD COUPLER TP (C-2265T) 5 mm2, PUSH-ON TERMINAL CONN .187 FLAG INSUL 14-16AWG 2 mm2, PUSH-ON TERMINAL .250X.032 FIQD FLAG STRIP(AA-2220Z) RoHS Compliant: Yes 0.8 mm2, PUSH-ON TERMINAL CONN .250 FLAG INSUL 18-22AWG 0.8 mm2, PUSH-ON TERMINAL .187X.020 FIQD FLAG (AA-2222) 0.8 mm2, PUSH-ON TERMINAL .187X.032 FIQD FLAG (BB-2225) 2 mm2, PUSH-ON TERMINAL CONN .250 MALE INSUL 14-16AWG 2 mm2, TAB TERMINAL 190070020
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Molex, Inc. MOLEX INC
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FS70VSJ-06F FS70VSJ-06F-A1 FS70VSJ-06F-T11 |
70 A, 60 V, 0.0083 ohm, N-CHANNEL, Si, POWER, MOSFET High-Speed Switching Use Nch Power MOS FET Transistors>Switching/MOSFETs
|
Renesas Electronics Corporation
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2SK2885L 2SK2885S 2SK2885 |
Power switching MOSFET Silicon N Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
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TOSHIBA[Toshiba Semiconductor]
|
MP4401 E002512 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING From old datasheet system
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Toshiba
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MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
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TOSHIBA[Toshiba Semiconductor]
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